2SA1730 features adoption of fbet , mbit processes. large current capacity. low collector-to-emitter saturation voltage. fast switching speed. small-sized package. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current i c -3 a collector current (pulse) i cp -6 a collector dissipation * p c 1.5 w jumction temperature t j 150 storage temperature t stg -55to+150 * mounted on ceramic board (250mm 2 x 0.8mm). sales@twtysemi.com 1 of 2 http://www.twtysemi.com product specification 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb =-40v,i e =0 -1 a emitter cutoff current i ebo v eb =-3v,i c =0 -1 a dc current gain h fe v ce =-2v,i c = -500ma 70 280 gain bandwidth product f t v ce =-2v,i c = -500ma 300 mhz common base output capacitance cob v cb = -10v , f = 1mhz 35 pf collector-to-emitter saturation voltage v ce(sat) i c = -1.5a , i b =-75ma -0.3 -0.8 v base-to-emitter saturation voltage v be(sat) i c = -1.5a , i b =-75ma -0.95 -1.3 v collector-to-base breakdown voltage v (br)cbo i c =-10a,i e =0 -50 v collector-to-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -40 v emitter-to-base breakdown voltage v (br)ebo i e = -10a , i c =0 -5 v turn-on time t on 50 100 ns storage time t stg 120 220 ns turn-off time t off 150 300 ns h fe classification marking rank q r s hfe 70 140 100 200 140 280 ah sales@twtysemi.com 2 of 2 http://www.twtysemi.com 2SA1730 product specification 4008-318-123
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